Dr. Peter B. Kosel

Dr. Kosel received the B.Sc. in Physics from the University of Sydney, Australia in 1968. In 1976 he received the Ph.D. in Electrical Engineering from the University of New South Wales, Australia. From 1969 through 1972, he served as a teaching fellow at the University of New South Wales and was professional officer for the microelectronics cleanroom from 1973 through 1975. His doctoral research was in photolithography involving the design and construction of a novel optical direct wafer stepper capable of producing submicron feature sizes. From 1976 to 1980, he was supervisor of the Integrated Circuits Laboratory at the University of New South Wales. He joined the University of Cincinnati in 1980, and is currently a Professor of Electrical and Computer Engineering.

Research Interests

Dr. Kosel's research interests and activities encompass a broad area of semiconductor devices and integrated circuits engineering in silicon, gallium arsenide, polycrystalline diamond and aluminum nitride. His fabrication studies include the application of rapid thermal processing of implants, natural doping of chalcopyrite semiconductors, anodic growth of thin dielectric isolations between metal electrodes, reactive sputter deposition of aluminum nitride and ampoule growth of chalcopyrite semiconductors. Device and integrated circuits research is being pursued in gallium arsenide based CCDs and in wide bandgap semiconductors with emphasis in integrated power converters for high temperature operation and cold electron sources. More recent activities involve the application of chalcopyrite semiconductors in photonics for high-density and high-speed optical communications. The development of computer simulation software has been an inherent ongoing activity in this research; in particular, new simulation tools have been developed for voltage breakdown in overlapping electrode structures, charge transport in charge coupled devices and the growth of multilayer materials by molecular beam epitaxy. The inhouse software complements the use well-known programs from Stanford (SUPREM, SEDAN) and Berkeley (SPICE, SAMPLE). Funding for the various research activities has come from the National Science Foundation, AFOSR, and SBIRs.

He is a member of the ECS, the Optical Society of America, Society of Industrial and Applied Mathematics, the Society of Photo-Optical Instrumentation Engineers, Eta Kappa Nu, Sigma Xi, MRS, and a senior member of IEEE.

Dr. Kosel is the director of the GaAs Devices and ICS Lab.

Recent Publications

P.B. Kosel, A. Hanjani, “Optic fiber clock distribution in high speed video memory”, Proc. SPIE on Photodetector Materials and Devices VII, Vol. 4650, pp. 11-22 (2002).

R. Ramamurti, V. Shanov, R.N. Singh, M. Samiee, P.B. Kosel, “Polycrystalline Diamond films for high-temperature electronics and MEMs”, Proc. 6^th Applied Diamond Conf./Frontier Carbon Tech. Joint Conf. (ADC/FCT 2001), p. 62 (2001).

R.L.C. Wu, W.C. Lanter, J. Wrabnek, P.B. Kosel, C.A. DeJoseph, "Processing effects on electrical properties of diamond-like carbon”, New Diamond and Frontier Carbon Technology (Japan), vol. 10, No. 6, p. 383-396 (2000).

R.L.C. Wu, W.C. Lanter, J. Wrabnek. P.B. Kosel, C.A. DeJoseph, “Ion beam processing of carbon nitride thin films”, Mat. Res. Soc. Symp. Proc., Vol. 585, p. 245 (2000).

R.L.C. Wu, J. Wrabnek., W.C. Lanter, P.B. Kosel, S.J. Fries-Carr, J.A. Weimer, “A new manufacturing technology for producing high energy density diamond-like carbon capacitors”, CARTS ‘00, Proceedings of 20^th Annual Capacitor and Resistor Technology Symposium, p. 69 (2000).

O.B. Krutko, P.B. Kosel, R.L.C. Wu, S.J. Fries-Carr, S. Heidger, J.A. Weimer, “P-Type polycrystalline diamond layers by rapid thermal diffusion of boron”, Appl. Phys. Lett., Vol. 76, No. 7, p. 849 (2000).

V.V. Kulish, P.B. Kosel, N. Kolcio, I.V. Gubanov, “Compact electron EH-accelerator for an intense x-ray flash source”, Proc. SPIE on Radiation Sources and Radiation Interactions, Vol. 3771, p. 30, (1999).

P.B. Kosel, R. Monreal, O.B. Krutko, S. Heidger, S. Fries-Carr, J. Weimer, R.L.C. Wu, “Multilayer capacitors by bonding of polycrystalline diamond films by rapid thermal processing”, CARTS ‘99, Proceedings of 19^th Annual Capacitor and Resistor Technology Symposium, p. 111 (1999).

P.B. Kosel, R. Monreal, S. Fries-Carr, J.A. Weimer, S. Heidger, R.L.C. Wu, “Device fabrication in polycrystalline diamond”, CARTS ‘98, Proceedings of 18^th Annual Capacitor and Resistor Technology Symposium, p. 77 (1998).

V.V. Kulish, P.B. Kosel, A.G. Kailyuk, “New acceleration principle of charged particles for electronic applications: The general hierarchic description”, Intern. J. Infrared and Millimeter Waves, Vol. 19, No. 1, p. 33-95 (1998).

V.V. Kulish, P.B. Kosel, “New acceleration principle of charged particles for electronic applications: Examples”, Intern. J. Infrared and Millimeter Waves, Vol. 19, No. 2 (1998).

P.B. Kosel, A.M. Dalton, R. Monreal, S.J. Fries-Carr, J.A. Weimer, R.L.C. Wu, “Optimization of diamond-like films for electrical applications”, CARTS ‘97, Proceedings of 17^th Annual Capacitor and Resistor Technology Symposium, p. 135 (1997).

A.M. Dalton, P.B. Kosel, R. Monreal, S.J. Fries-Carr, J.A. Weimer, R.L.C. Wu, W. Lanter, “Diamond-like carbon film properties from optical and electrical measurements”, Mat. Res. Soc. Symp. Proc. Vol. 446, p. 407 (1996).

P.B. Kosel, D. Wu, A.M. Dalton, A. Hanjani, S.F. Carr, P.R. Emmert, R.L.C. Wu, “UV/VIS Photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond”, Proc. SPIE on Photodetectors: Materials and Devices, Vol. 2685, p. 140 (1996).

Patents:

Patent awarded, December 1, 1998, “Capacitor structures with dielectric coated conductive substrates”, with S.J. Fries-Carr and R.L.C. Wu, patent no. 5844770.

Patent awarded, August 13, 2002, “Inductional undulative EH-accelerator “, with V.V. Kulish, N. Kolcio and A.C. Melnyk, patent no. 6433494 B1.

Seminars and Conference Presentations

P.B. Kosel, A. Hanjani, “Optic fiber clock distribution in high speed video memory”, Proc. SPIE on Photodetector Materials and Devices, San Jose, California, January 21-23, 2002.

P.B. Kosel, A.M. Dalton, R. Monreal, S.Fries-Carr, J.A. Weimer, R.L.C. Wu, “Optimization of diamond-like films for electrical applications”, CARTS 97, Proceedings of 17^th Annual Capacitor and Resistor Technology Symposium, Jupiter, Florida, March 24-27 (1997).

P.B. Kosel, D. Wu, A.M. Dalton, A. Hanjani, S.F. Carr, P.R. Emmert, R.L.C. Wu, “UV/VIS Photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond”, SPIE Proc. on Photodetectors: Materials and Devices, San Jose, California, February 1, 1996.

P.B. Kosel, “GaAs CCD-based high-speed video memory”, MTL Systems, Dayton, September (1995).

P.B. Kosel, D. Wu, S.F. Carr, A. Garscadden, R.L.C. Wu, “Comparison of diamond-like carbon and polycrystalline diamond films for high temperature capacitors”, Proceedings of the Applied Diamond Conference on Applications of Diamond Films and Related Materials: Third International Conference, Gaithersburg, Maryland, August 21-24 (1995).

P.B. Kosel, D. Wu, O.P. Kosel, S.F. Carr, A. Garscadden, P.R. Emmert, R.L.C. Wu, “Diamond-like carbon films for high temperature electronic applications”, Electrochemical Society Proceedings of 4^th International Symposium on Diamond Films, Reno, Nevada, May 25 (1995).

P.B. Kosel, D. Wu, S.F. Carr, P.R. Emmert, R.L.C. Wu, “High temperature Diamond Film for Capacitors”, CARTS 95, Proceedings of 15^th Annual Capacitor and Resistor Technology Synposium, San Diego, California, March 17 (1995).

P.B. Kosel, J. Iyer, S.F. Carr, A. Garscadden, P.N. Barnes, R.L.C. Wu, “Device quality polycrystalline diamond by microwave-enhanced CVD”, Proc. SPIE on Diamond-Film Semiconductors, Los Angeles, California, January 24-28 (1994).

V.E. Stenger, P.B. Kosel, S.M. Hedge, M.C. Ohmer, “Growth of InGaP2 by LP-MOCVD and characterization of lattice ordering”, Electrochemical Society Proceedings of 18^th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII), Honolulu, Hawaii, May 19, (1993).

P.B. Kosel, “Optical anisotropy of ZnGeP2 via spectral variable azimuthal and polar angle ellipsometry”, Air Force Materials Workshop on Nonlinear Optical Crystals, Wright Laboratories, Wright-Patterson AFB, Dayton, Ohio, April 28 (1993).

P.B. Kosel, T.R. Krishna, “Computer simulation and characterization of MBE growth of heterostructures in AlGaAs/GaAs”, Electrochemical Society Proceedings on Materials and Processing Issues for Large Scale Integrated Electronic and Photonic Arrays, St. Louis, Missouri, May 19 (1992).

P.B. Kosel, N. Bozorgebrahimi, J. Iyer, “Characteristics of MSM detectors for meander channel CCD imagers on GaAs”, SPIE Proc. on Detectors, Electronics, and Signal Processing, San Diego, California, July 24-26, 1991.

R.E. Poore, P.B. Kosel, “Steady state GaAs MESFET simulation - an implementation guide”, Proc. 7^th Int. Conference on Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, April 8-12, 1991.

R.E. Poore, P.B. Kosel, “Simulation of charge transfer in GaAs CCDs”, Proc. 7^th Int. Conference on Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, April 8-12, 1991.

Graduate Theses Advised

Theses completed

1. A. Hanjani, “High-speed optical interconnects for video memory”, Ph.D. thesis, December, 2000.

2. O. Krutko, “Optically switched integrated circuit power converter for high temperature operation”, Ph.D. thesis, June, 1999.

3. R. Monreal “Fabrication of multilayer capacitors in polycrystalline diamond films”, M.S. thesis, March,1999.

4. A.M. Dalton, “Growth and characterization of diamond-like films”, M.S. thesis, March, 1997.

5. Wu Q., “Optical characterization of polycrystalline diamond films”, M.S. thesis, May, 1996.

6. Stenger V., “Growth and characterization of MOCVD AlGaAs/GaAs structures”, M.S. thesis, March, 1994

7. Iyer J., “Design and fabrication of linear MSM detector array for UV spectrophotometry”, M.S. thesis, February, 1994.

8. Tyamogondlu K., “Characterization of MBE grown materials for HEMT devices”, M.S. thesis, May, 1993

9. Poore, R.E., “Modeling and Simulation of HEMTs and Heterostructure CCDs on GaAs,” Ph.D. thesis, August, 1991

10. Bechtler, L.E. “Fabrication of Anodized Overlapping Gate Charge Coupled Devices on AlGaAs/GaAs Wafers,” Ph.D. thesis, November, 1991.

11. Bozorgebrahimi, N., “MSM Photodetectors for 2D Meander Channel CCD Imagers on GaAs,” Ph.D. thesis, January, 1991.

12. Bechtler, L.E., “Recessed-Gate MESFETs on MBE-Grown Gallium Arsenide,” November, 1988.

13. Katzer, D.S. “Overlapping-Gate Charge-Coupled Device Imagers on Gallium Arsenide,” Ph.D. thesis, May, 1988.

14. Poore, R.E., “Modeling and Characterization of Overlapping Gate GaAs CCDs,” M.S. thesis, May, 1988.

15. Miller, E.M., “Two-Phase CCDs on Gallium Arsenide,” M.S. thesis, May, 1988.

16. Bozorgebrahimi, N., “Modeling of Process Variations in GaAs IC Fabrication,” M.S. thesis, February, 1987.

17. Roeckner, W.J., “An Overlapping Dual Gate MESFET on GaAs for Mixer Applications,” M.S. thesis, June, 1986.

18. Wilson, M.R., “Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide,” Ph.D. thesis, March, 1986.

19. Lee, H.D., “A Process for Investigating Basic Integrated Circuit Structures on Gallium Arsenide,” M.S. thesis, December, 1984.

20. King, L.A., “A Finite Difference Model for Charge Transfer in Gallium Arsenide Charge Coupled Devices,” M.S. thesis, July, 1984.

21. Wilson, M.R., “A Fabrication Process for Overlapping Metal Electrodes for Gallium Arsenide Charge Coupled Devices,” M.S. thesis, December, 1983.

Theses in Progress

M. Samiee, “Cold electron sources”, proceeding towards Ph.D., topic approved.

I. Murali, “Modeling and simulation of optical networks”, proceeding towards MS.

Last modified: Mon Apr 28, 2003